| Product Type: | MOSFETs |
| Manufacturer: | STMicroelectronics |
| Vds – Drain-Source Breakdown Voltage: | 40 V |
| Id – Continuous Drain Current: | 120 A |
| Rds On – Drain-Source Resistance: | 1.6 mOhms |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vgs – Gate-Source Voltage: | – 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 4 V |
| Qg – Gate Charge: | 43 nC |
| Minimum Operating Temperature: | – 55 ℃ to + 175 ℃ |
| Pd – Power Dissipation: | 150 W |
| Channel Mode: | Enhancement |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Qualification: | AEC-Q101 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
The STL210N4F7AG is a power MOSFET from STMicroelectronics, designed for efficient switching applications in power management systems.
Applications of STL210N4F7AG:
- Power Supplies: Ideal for use in DC-DC converters and power supply circuits where efficiency is critical.
- Motor Control: Commonly used in motor drivers and controllers for efficient switching.
- Automotive Applications: Suitable for automotive power management systems, including battery management and electric vehicle applications.
- Industrial Equipment: Employed in industrial automation and control systems where high power and efficiency are required.