| Manufacturer | Infineon |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-251-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds – Drain-Source Breakdown Voltage | 55 V |
| Id – Continuous Drain Current | 17 A |
| Rds On – Drain-Source Resistance | 110 mOhms |
| Vgs – Gate-Source Voltage | – 16 V, + 16 V |
| Vgs th – Gate-Source Threshold Voltage | 1.8 V |
| Qg – Gate Charge | 10 nC |
| Minimum Operating Temperature | – 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd – Power Dissipation | 38 W |
| Channel Mode | Enhancement |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Configuration | Single |
| Height | 6.22 mm |
| Length | 6.73 mm |
| Product Type | MOSFET |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel |
| Width | 2.38 mm |
| Unit Weight | 0.011993 oz |
IRLU024NPBF is a part number for a power MOSFET transistor manufactured by International Rectifier, commonly used in a variety of applications, including power supplies, motor controls, and battery chargers.