IRLML2030TRPBF Infineon Technologies MOSFET

Manufacturer	Infineon
Technology	Si
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	30 V
Id – Continuous Drain Current	2.7 A
Rds On – Drain-Source Resistance	100 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	1.3 V
Qg – Gate Charge	1 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 150 C
Pd – Power Dissipation	1.3 W
Channel Mode	Enhancement
Tradename	HEXFET
Series	N-Channel
Brand	Infineon Technologies
Configuration	Single
Fall Time	2.9 ns
Forward Transconductance – Min	2.6 S
Height	1.1 mm
Length	2.9 mm
Product Type	MOSFET
Rise Time	3.3 ns
Factory Pack Quantity	3000
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	4.5 ns
Typical Turn-On Delay Time	4.1 ns
Width	1.3 mm
Unit Weight	0.000282 oz

IRLML2030TRPBF