| Manufacturer: | NXP |
| Transistor Type: | 1 N-Channel |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Pd – Power Dissipation: | 110 W |
| Vds – Drain-Source Breakdown Voltage: | 55 V |
| Id – Continuous Drain Current: | 49 A |
| Rds On – Drain-Source Resistance: | 22 mOhms |
| Vgs – Gate-Source Voltage: | – 20 V, + 20 V |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 175 C |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Height: | 9.4 mm |
| Length: | 10.3 mm |
| Width: | 4.5 mm |
| Rise Time: | 50 ns |
| Typical Turn-Off Delay Time: | 40 ns |
| Typical Turn-On Delay Time: | 18 ns |
The IRFZ44N is a popular N-channel power MOSFET manufactured by NXP Semiconductors, commonly used in a variety of switching applications.
Applications:
– Power supply circuits
– Motor drivers
– DC-DC converters
– Battery management systems