| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Package | Tape & Reel (TR), Cut Tape (CT) |
| Description | MOSFET P-CH 55V 31A DPAK |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | D-Pak |
| Base Product Number | IRFR5305 |
| Technology | MOSFET (Metal Oxide) |
The IRFR5305TRPBF is a specific P-Channel Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies.
The IRFR5305TRPBF is a P-Channel MOSFET, which means it operates with a positive voltage on the gate relative to the source.
Capable of handling a maximum voltage of 55 V and a maximum continuous drain current of 31A, making it suitable for medium-power applications.
TO-252AA (DPAK) Package: The Surface Mount TO-252AA (DPAK) package is a compact surface-mount package, allowing for efficient mounting on circuit boards.
On-State Resistance (RDS(on)): 65mOhms – The lower the RDS(on), the better the MOSFET conducts when in the on-state.
Total Gate Charge (Qg): 42nC – Represents the total electric charge required to switch the MOSFET between its on and off states.