IRFR3607TRPBF Infineon Technologies Power MOSFET

Manufacturer	Infineon
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-252-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	75 V
Id – Continuous Drain Current	80 A
Rds On – Drain-Source Resistance	7.34 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	1.8 V
Qg – Gate Charge	56 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	140 W
Channel Mode	Enhancement
Brand	Infineon Technologies
Configuration	Single
Height	2.3 mm
Length	6.5 mm
Product Type	MOSFET
Factory Pack Quantity	2000
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Width	6.22 mm
Unit Weight	0.011640 oz

IRFR3607TRPBF