IRFR1205TRPBF

Manufacturer	Infineon
Brand	Infineon Technologies
Product Type	MOSFET
Factory Pack Quantity	2000
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-252-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	55 V
Id – Continuous Drain Current	37 A
Rds On – Drain-Source Resistance	27 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	1.8 V
Qg – Gate Charge	43.3 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	69 W
Channel Mode	Enhancement
Configuration	Single
Fall Time	60 ns
Height	2.3 mm
Length	6.5 mm
Rise Time	69 ns
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	47 ns
Typical Turn-On Delay Time	7.3 ns
Width	6.22 mm
Unit Weight	0.011640 oz
Type	HEXFET Power MOSFET