IRFP4868PBF Infineon Technologies N-Channel MOSFET

Manufacturer	Infineon
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-247-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	300 V
Id – Continuous Drain Current	70 A
Rds On – Drain-Source Resistance	32 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	5 V
Qg – Gate Charge	270 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	517 W
Channel Mode	Enhancement
Packaging	Tube
Configuration	Single
Fall Time	45 ns
Forward Transconductance – Min	80 S
Height	20.7 mm
Length	15.87 mm
Product Type	MOSFET
Rise Time	16 ns
Factory Pack Quantity	400
Typical Turn-Off Delay Time	62 ns
Typical Turn-On Delay Time	24 ns
Width	5.31 mm
Unit Weight	0.211644 oz

IRFP4868PBF