IRFP250MPBF Infineon Technologies Power MOSFET

Manufacturer	Infineon
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-247-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	200 V
Id – Continuous Drain Current	30 A
Rds On – Drain-Source Resistance	75 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	4 V
Qg – Gate Charge	82 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	214 W
Channel Mode	Enhancement
Packaging	Tube
Brand	Infineon Technologies
Configuration	Single
Fall Time	33 ns
Forward Transconductance – Min	17 S
Height	20.7 mm
Length	15.87 mm
Product Type	MOSFET
Rise Time	43 ns
Factory Pack Quantity	800
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	41 ns
Typical Turn-On Delay Time	14 ns
Width	5.31 mm
Unit Weight	0.211644 oz

IRFP250MPBF