| Product: | MOSFETs |
| Manufacturer: | Vishay |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Series: | IRF |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.7A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 25 V |
| Power Dissipation (Max) | 74W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging: | Tube |
The IRF830 is an N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching and high-voltage applications. The IRF830 is widely used in power supply circuits, motor drivers, and other applications requiring efficient switching of high currents and voltages.