| Manufacturer | Infineon |
| Brand | Infineon Technologies |
| Product Type | MOSFET |
| Factory Pack Quantity | 4000 |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | SOIC-8 |
| Transistor Polarity | N-Channel, P-Channel |
| Number of Channels | 2 Channel |
| Vds – Drain-Source Breakdown Voltage | 20 V |
| Id – Continuous Drain Current | 6.6 A |
| Rds On – Drain-Source Resistance | 29 mOhms |
| Vgs – Gate-Source Voltage | – 12 V, + 12 V |
| Vgs th – Gate-Source Threshold Voltage | 700 mV |
| Qg – Gate Charge | 18 nC |
| Minimum Operating Temperature | – 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd – Power Dissipation | 2 W |
| Channel Mode | Enhancement |
| Configuration | Dual |
| Height | 1.75 mm |
| Length | 4.9 mm |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Width | 3.9 mm |
| Unit Weight | 0.019048 oz |
