IPI80N06S4-07

Manufacturer	Infineon
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-262-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	60 V
Id – Continuous Drain Current	80 A
Rds On – Drain-Source Resistance	7.1 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	4 V
Qg – Gate Charge	43 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	79 W
Channel Mode	Enhancement
Tradename	OptiMOS
Series	OptiMOS-T2
Packaging	Tube
Configuration	Single
Fall Time	5 ns
Height	9.45 mm
Length	10.2 mm
Product Type	MOSFET
Rise Time	3 ns
Factory Pack Quantity	500
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	23 ns
Typical Turn-On Delay Time	15 ns
Width	4.5 mm
Part # Aliases	IPI8N6S47XK SP000415690 IPI80N06S407AKSA1
Unit Weight	0.084199 oz