| Manufacturer | Infineon |
| Mounting Style | Through Hole |
| Package / Case | TO-262-3 |
| Configuration | Single |
| Minimum Operating Temperature | – 55 C |
| Maximum Operating Temperature | + 175 C |
| Qualification | AEC-Q101 |
| Packaging | Tube |
| Pd – Power Dissipation | 71 W |
| Product Type | MOSFET |
| Factory Pack Quantity | 500 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | OptiMOS |
| Part # Aliases | SP000646190 IPI8N4S44XK IPI80N04S404AKSA1 |
| Unit Weight | 0.084199 oz |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds – Drain-Source Breakdown Voltage | 40 V |
| Id – Continuous Drain Current | 80 A |
| Rds On – Drain-Source Resistance | 4.2 mOhms |
| Vgs – Gate-Source Voltage | – 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage | 3 V |
| Qg – Gate Charge | 43 nC |
| Channel Mode | Enhancement |
