IPG20N04S4L-11

Manufacturer	Infineon
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TDSON-8
Transistor Polarity	N-Channel
Number of Channels	2 Channel
Vds – Drain-Source Breakdown Voltage	40 V
Id – Continuous Drain Current	20 A
Rds On – Drain-Source Resistance	11.6 mOhms
Vgs – Gate-Source Voltage	– 16 V, + 16 V
Vgs th – Gate-Source Threshold Voltage	1.7 V
Qg – Gate Charge	26 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	41 W
Channel Mode	Enhancement
Qualification	AEC-Q101
Tradename	OptiMOS
Series	OptiMOS-T2
Packaging	Reel
Brand	Infineon Technologies
Configuration	Dual
Height	1.27 mm
Length	5.9 mm
Product Type	MOSFET
Factory Pack Quantity	5000
Subcategory	MOSFETs
Transistor Type	2 N-Channel
Width	5.15 mm
Part # Aliases	IPG2N4S4L11XT SP000705564 IPG20N04S4L11ATMA1
Unit Weight	0.003398 oz