IPD90N04S4-04 Infineon Technologies MOSFET

Manufacturer	Infineon
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-252-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	40 V
Id – Continuous Drain Current	90 A
Rds On – Drain-Source Resistance	4.1 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	4 V
Qg – Gate Charge	33 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	71 W
Channel Mode	Enhancement
Tradename	OptiMOS
Series	OptiMOS-T2
Brand	Infineon Technologies
Configuration	Single
Fall Time	11 ns
Height	2.3 mm
Length	6.5 mm
Product Type	MOSFET
Rise Time	11 ns
Factory Pack Quantity	2500
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	9 ns
Typical Turn-On Delay Time	10 ns
Width	6.22 mm
Unit Weight	0.011640 oz

IPD90N04S4-04