IPD80R1K0CE Infineon N-Channel MOSFET

Manufacturer	Infineon
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-252-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	800 V
Id – Continuous Drain Current	5.7 A
Rds On – Drain-Source Resistance	800 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	2.1 V
Qg – Gate Charge	31 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 150 C
Pd – Power Dissipation	83 W
Channel Mode	Enhancement
Tradename	CoolMOS
Series	CoolMOS CE
Brand	Infineon Technologies
Configuration	Single
Fall Time	8 ns
Height	2.3 mm
Length	6.5 mm
Product Type	MOSFET
Rise Time	15 ns
Factory Pack Quantity	2500
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	72 ns
Typical Turn-On Delay Time	25 ns
Width	6.22 mm
Unit Weight	0.011640 oz

IPD80R1K0CE