IPD60N10S4L-12 Infineon Technologies MOSFET

Manufacturer	Infineon
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-252-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	100 V
Id – Continuous Drain Current	60 A
Rds On – Drain-Source Resistance	9.8 mOhms
Vgs – Gate-Source Voltage	– 16 V, + 16 V
Vgs th – Gate-Source Threshold Voltage	1.1 V
Qg – Gate Charge	49 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	94 W
Channel Mode	Enhancement
Series	XPD60N10
Configuration	Single
Fall Time	21 ns
Height	2.3 mm
Length	6.5 mm
Product Type	MOSFET
Rise Time	3 ns
Factory Pack Quantity	2500
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	20 ns
Typical Turn-On Delay Time	4 ns
Width	6.22 mm
Unit Weight	0.011640 oz

IPD60N10S4L-12