IPD25N06S4L-30 Infineon Technologies N-Channel MOSFET

Manufacturer	Infineon
Packaging	Reel
Technology	Si
Product Type	MOSFET
Transistor Type	1 N-Channel
Rds On – Drain-Source Resistance	23 mOhms
Vds – Drain-Source Breakdown Voltage	60 V
Id – Continuous Drain Current	25 A
Vgs – Gate-Source Voltage	– 16 V, + 16 V
Vgs th – Gate-Source Threshold Voltage	1.2 V
Width / Height / Length	6.22 mm / 2.3 mm / 6.5 mm
Configuration	Single
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Mounting Style	SMD/SMT
Package / Case	TO-252-3
Series	OptiMOS-T2
Pd – Power Dissipation	29 W
Factory Pack Quantity	2500
Tradename	OptiMOS
Part # Aliases	IPD25N6S4L3XT SP000481508 IPD25N06S4L30ATMA1
Unit Weight	0.011640 oz

IPD25N06S4L-30