IPB180N04S4-01 Infineon Technologies Power-Transistor

Manufacturer	Infineon
Series	OptiMOS-T2
Qualification	AEC-Q101
Brand	Infineon Technologies
Product Type	MOSFET
Factory Pack Quantity	1000
Tradename	OptiMOS
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-263-7
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	40 V
Id – Continuous Drain Current	180 A
Rds On – Drain-Source Resistance	1.3 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	3 V
Qg – Gate Charge	135 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	188 W
Channel Mode	Enhancement
Configuration	Single
Fall Time	41 ns
Height	4.4 mm
Length	10 mm
Rise Time	24 ns
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	38 ns
Typical Turn-On Delay Time	35 ns
Width	9.25 mm
Part # Aliases	IPB18N4S41XT SP000705694 IPB180N04S401ATMA1
Unit Weight	0.056438 oz

IPB180N04S4-01