IPB120N06S4-H1

Manufacturer	Infineon
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-263-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	60 V
Id – Continuous Drain Current	120 A
Rds On – Drain-Source Resistance	2.4 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	4 V
Qg – Gate Charge	270 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	250 W
Channel Mode	Enhancement
Tradename	OptiMOS
Series	OptiMOS-T2
Packaging	Reel
Configuration	Single
Fall Time	15 ns
Height	4.4 mm
Length	10 mm
Product Type	MOSFET
Rise Time	5 ns
Factory Pack Quantity	1000
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	60 ns
Typical Turn-On Delay Time	30 ns
Width	9.25 mm
Part # Aliases	IPB12N6S4H1XT SP000396274 IPB120N06S4H1ATMA1
Unit Weight	0.139332 oz