| Manufacturer | Infineon |
| Mounting Style | SMD/SMT |
| Package / Case | TO-263-3 |
| Configuration | Single |
| Rise Time | 5 ns |
| Fall Time | 10 ns |
| Minimum Operating Temperature | – 55 C |
| Maximum Operating Temperature | + 175 C |
| Packaging | Reel |
| Pd – Power Dissipation | 188 W |
| Product Type | MOSFET |
| Factory Pack Quantity | 1000 |
| Technology | Si |
| Tradename | OptiMOS |
| Part # Aliases | IPB12N6S42XT SP000415560 IPB120N06S402ATMA1 |
| Unit Weight | 0.139332 oz |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds – Drain-Source Breakdown Voltage | 60 V |
| Id – Continuous Drain Current | 120 A |
| Rds On – Drain-Source Resistance | 2.4 mOhms |
| Vgs – Gate-Source Voltage | – 20 V, + 20 V |
| Qg – Gate Charge | 150 nC |
