| Manufacturer | Infineon Technologies |
| Mounting Style | SMD/SMT |
| Transistor Polarity | N-Channel |
| Number of Channel | 1 Channel |
| Product Type | MOSFET |
| Vgs – Gate-Source Voltage | – 20V, + 20V |
| Minimum Operating Temperature | – 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Configuration | Single |
| Rise Time | 13 ns |
| Package / Case | TO-263-3 |
| Series | OptiMOS-T2 |
| Qualification | AEC-Q101 |
| Pd – Power Dissipation | 115 W |
| Factory Pack Quantity | 1000 |
| Tradename | OptiMOS |
| Part # Aliases | IPB1N4S4H2XT SP000711274 IPB100N04S4H2ATMA1 |
| Unit Weight | 0.139332 oz |
