IPA60R190P6 Infineon Technologies MOSFET transistor

Manufacturer	Infineon
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	600 V
Id – Continuous Drain Current	20.2 A
Rds On – Drain-Source Resistance	190 Ohms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	3.5 V
Qg – Gate Charge	37 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 150 C
Pd – Power Dissipation	34 W
Channel Mode	Enhancement
Tradename	CoolMOS
Series	CoolMOS P6
Packaging	Tube
Brand	Infineon Technologies
Configuration	Single
Fall Time	7 ns
Height	16.15 mm
Length	10.65 mm
Product Type	MOSFET
Rise Time	8 ns
Factory Pack Quantity	500
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	45 ns
Typical Turn-On Delay Time	15 ns
Width	4.85 mm
Unit Weight	0.068784 oz

IPA60R190P6