FDS8958A with Datasheet N and P-Channel onsemi

Product Type:	MOSFETs
Transistor Type:	1 N-Channel, 1 P-Channel
Type:	MOSFET
Manufacturer:	onsemi
Vds – Drain-Source Breakdown Voltage:	30 V
Rds On – Drain-Source Resistance:	28 mOhms, 52 mOhms
Vgs – Gate-Source Voltage:	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	1 V, 3 V
Id – Continuous Drain Current:	7 A, 5 A
Qg – Gate Charge:	16 nC, 13 nC
Operating Temperature:	– 55 ℃ to + 150 ℃
Pd – Power Dissipation:	2 W
Channel Mode:	Enhancement
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	2 Channel
Configuration:	Dual
Fall Time:	3 ns, 9 ns
Forward Transconductance – Min:	25 S, 10 S
Rise Time:	5 ns, 13 ns
Package / Case:	SOIC-8
Mounting Style:	SMD/SMT

FDS8958A