| Manufacturer | Infineon |
| Product Type | MOSFET |
| Factory Pack Quantity | 5000 |
| Tradename | OptiMOS |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | TISON-8 |
| Transistor Polarity | N-Channel |
| Number of Channels | 2 Channel |
| Vds – Drain-Source Breakdown Voltage | 30 V |
| Id – Continuous Drain Current | 40 A |
| Rds On – Drain-Source Resistance | 3.8 mOhms, 2.8 mOhms |
| Vgs – Gate-Source Voltage | – 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage | 1.2 V |
| Qg – Gate Charge | 10 nC, 12.8 nC |
| Minimum Operating Temperature | – 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd – Power Dissipation | 2.5 W |
| Channel Mode | Enhancement |
| Configuration | Dual |
| Fall Time | 3 ns, 2.2 ns |
| Height | 1.27 mm |
| Length | 5.9 mm |
| Rise Time | 3.8 ns, 2.8 ns |
| Transistor Type | 2 N-Channel |
| Typical Turn-Off Delay Time | 17 ns, 15 ns |
| Typical Turn-On Delay Time | 4.7 ns, 3.3 ns |
| Width | 5.15 mm |
| Unit Weight | 0.003402 oz |
