| Manufacturer: | Broadcom Limited |
| Product: | RF JFET Transistors |
| Transistor Polarity: | N-Channel |
| Type: | GaAs pHEMT |
| Operating Frequency: | 2 GHz |
| Gain: | 17.5 dB |
| Vds – Drain-Source Breakdown Voltage: | 5.5 V |
| Vgs – Gate-Source Breakdown Voltage: | – 5 V |
| Id – Continuous Drain Current: | 145 mA |
| Maximum Operating Temperature: | + 160 C |
| Pd – Power Dissipation: | 725 mW |
| Mounting Style: | SMD/SMT |
| Configuration: | Single Dual Source |
| Forward Transconductance – Min: | 230 mmho |
| NF – Noise Figure: | 0.5 dB |
| P1dB – Compression Point: | 20 dBm |
| Package / Case: | SOT-343 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
The ATF-34143-TR1G is a high-performance, low-noise gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) manufactured by Broadcom (formerly Avago Technologies). This transistor is optimized for use in low-noise amplifier (LNA) applications, particularly in wireless communications, satellite receivers, and other RF and microwave systems.
Applications:
1. Low-Noise Amplifiers (LNAs):
– Ideal for use in LNA designs for wireless communication systems, such as cellular base stations, GPS receivers, and Wi-Fi access points.
– Helps improve the signal-to-noise ratio (SNR) of the receiver, enhancing overall system performance.
2. Satellite Communications:
– Suitable for satellite receiver front-ends where low noise and high gain are critical for receiving weak signals from space.
3. RF and Microwave Signal Processing:
– Used in RF and microwave circuits requiring amplification with minimal added noise, such as in radar systems, instrumentation, and test equipment.
4. Wi-Fi and Bluetooth Devices:
– Integrated into Wi-Fi and Bluetooth transceivers to enhance the sensitivity and range of wireless communication devices.
5. Aerospace and Defense:
– Employed in aerospace and defense applications where high performance, reliability, and low noise are essential.